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INSA Rennes
Outre les divers contrats de recherche avec des organismes institutionnels et industriels, l’activité de recherche du laboratoire se traduit par la publication régulière d’articles dans les revues scientifiques internationales et la participation, via des exposés ou des communications par affichage, à divers congrès et colloques scientifiques nationaux ou internationaux.
Publications archivées
Liste des publications
 
 
Publications dans des revues internationales à comité de lecture
 
 
 
Optical properties and morphology of InAs/InP (113)B surface quantum dots
A. Nakkar, H. Folliot, A. Le Corre, F. Doré, I. Alghoraibi, C. Labbé,1 G. Elias, S. Loualiche, M.−E. Pistol, P. Caroff, and C. Ellström
Appl. Phys. Lett. 92, 231911 (2008); DOI:10.1063/1.2943651
 
 
 
Carrier relaxation dynamics in InAs/InP quantum dots
P. Miska, J. Even, O. Dehaese, and X. Marie
APPLIED PHYSICS LETTERS 92, 191103 (2008)
 
 
 
Lasing spectra of 1.55 μm InAs/InP quantum dot lasers
K. Veselinov · F. Grillot · M. Gioannini · I. Montrosset · E. Homeyer · R. Piron · J. Even · A. Bekiarski · S. Loualiche
Opt Quant Electron DOI 10.1007/s11082−008−9197−6
 
 
 
Semianalytical model for simulation of electronic properties of narrow−gap strained semiconductor
J. Even, F. Doré, C. Cornet, and L. Pedesseau
PHYSICAL REVIEW B 77, 085305 2008
 
 
 
From k·p to atomic calculations applied to semiconductor heterostructures
L. Pedesseau1, C. Cornet1, F. Doré1, J. Even1, A. Schliwa2 and D. Bimberg2
Journal of Physics: Conference Series 107 (2008) 012009
 
 
 
Negative characteristic temperature of long wavelength InAs/AlGaInAs quantum dot lasers grown on InP substrates
I. Alghoraibi, T. Rohel, R. Piron, N. Bertru, C. Paranthoen, G. Elias, A. Nakkar, H. Folliot, A. Le Corre, and S. Loualiche
Appl. Phys. Lett. 91, 261105 (2007)
 
 
 
Demonstration of 1.51µm InAs/InP(311)B quantum dot single−mode laser operating under continuous wave
G. Moreau,1 K. Merghem,1 A. Martinez,1 S. Bouchoule,1 A. Ramdane,1 F. Grillot,2 R. Piron,2 O. Dehease,2 E. Homeyer,2 K. Tavernier,2 S. Loualiche,2 P. Berdaguer,3 and F. Pommerau3
IET Optoelectronics −− December 2007 −− Volume 1, Issue 6, p. 255−258
 
 
 
Novel nanostructures quantum dot based devices
S. Loualiche, A. LeCorre, and J. Even, J C. Simon, A. Ramdane
Proc. SPIE, Vol. 6779, 67790D (2007); DOI:10.1117/12.734329
 
 
 
Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP (311)B quantum dot lasers
N. F. Massé, E. Homeyer, I. P. Marko, A. R. Adams, S. J. Sweeney, O. Dehaese, R. Piron, F. Grillot, and S. Loualiche
Appl. Phys. Lett. 91, 131113 (2007)
 
 
 
Semianalytical evaluation of linear and nonlinear piezoelectric potentials
J. Even, F. Doré, C. Cornet, and L. Pedesseau, A. Schliwa and D. Bimberg
APPLIED PHYSICS LETTERS 91, 122112 2007
 
 
 
Strong Generation of Coherent Acoustic Phonons in Semiconductor Quantum Dots
A. Devos, F. Poinsotte,J. Groenen, O. Dehaese, N. Bertru,and A. Ponchet
PRL 98, 207402 (2007)
 
 
 
1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
G. Moreau et al.
Electronics Letters −− 10 May 2007 −− Volume 43, Issue 10, p. 571−572
 
 
 
Atomic scale study of the impact of the strain and composition of the
J. M. Ulloa,a C. Çelebi, and P. M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, and N. Bertru,I. Drouzas and D. J. Mowbray, M. J. Steer and M. Hopkinson
JOURNAL OF APPLIED PHYSICS 101, 081707 (2007)
 
 
 
Carrier Relaxation Dynamics 1.55 µm InAs/InP Quantum Dots Under High Resonant Excitation
C. Labbé, C. Cornet, H. Folliot, J. Even, P. Caroff, C. Levallois, O. Dehaese, A. Le Corre, and S. Loualiche
AIP Conf. Proc. 893, 991 (2007)
 
 
 
Theory and experiment of InAs/InP quantum dots: from calculations to laser emission
C. Cornet, M. Hayne, A. Schliwa, F. Doré, C. Labbé, H. Folliot, J. Even, D. Bimberg, V. V. Moshchalkov, and S. Loualiche
AIP Conf. Proc. 893, 779 (2007)
 
 
 
A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate
F. Doré, J. Even, C. Cornet, A. Schliwa, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre, and S. Loualiche
AIP Conf. Proc. −− April 10, 2007 −− Volume 893, pp. 889−890
 
 
 
Anisotropic and inhomogeneous Coulomb screening in the Thomas–Fermi approximation: Application to quantum dot–wetting layer system and Auger relaxation
J. Even, C. Cornet, and F. Doré
phys. stat. sol. (b) 244, No. 9, 3105–3114 (2007) / DOI 10.1002/pssb.200642334
 
 
 
Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers.
K. Veselinov, F. Grillot, P. Miska, E. Homeyer, P. Caroff, C. Platz, J. Even, X. Marie, O. Dehaese, S. Loualiche et A. Ramdane,
Journal of Optical and Quantum Electronics, 2006. 38(4−6): p. 369−379.
 
 
 
Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm.
E. Homeyer, R. Piron, P. Caroff , C. Paranthoen, O. Dehaese, A. Le Corre et S. Loualiche,
Physica Status solidi(c): Conferences and critical reviews, 2006. 3 (3): p. 407 − 410.
 
 
 
Time−resolved pump probe of 1.55 µm InAs/InP quantum dots under high resonant excitation
C. Cornet, C. Labbé, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, J. Even, A. Le Corre et S. Loualiche,
Applied Physics Letters, 2006. 88: p. 171502.
 
 
 
Effect of holes on the dynamic polarization of nuclei in semiconductors
A. Brunetti, M. Vladimirova, and D. Scalbert, H. Folliot and A. Lecorre
Phys. Rev. B., B 73, 121202R 2006
 
 
 
InAsSb/InGaAs quantum nanostructures on InP (100) substrate : observation of 2.35 μm photoluminescence
DORE F. , CORNET C. , SCHLIWA A. , BALLESTAR A. , EVEN J. , BERTRU N. , DEHAESE O. , ALGHORAIBI I. , FOLLIOT H. , PIRON R. , LE CORRE A. , LOUALICHE S.
Physica status solidi. C. Conferences and critical reviews. 2006 , vol. 3 , no 3 , pp. 524 − 527
 
 
 
Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 μm
HOMEYER E. , PIRON R. , CAROFF P. , PARANTHOEN C. , DEHAESE O. , LE CORRE A. , LOUALICHE S.
Physica status solidi. C. Conferences and critical reviews. 2006 , vol. 3 , no 3 , pp. 407 − 410
 
 
Communications orales
 
 
 
InAs quantum wires on InP substrate for VCSEL applications
ean Michel Lamy, Christophe Levallois, Cyril Paranthoen, Abdulhadi Nakkar, Herve Folliot, Olivier Dehaese, Thomas Batte, Alain Le Corre
IPRM 2008 Versailles